
The core of the special ceramic sintering furnace is divided into three major sections: the basic physical densification principle, the furnace body heating and temperature control principle, and the exclusive process principle for different furnace types. It covers oxide/non oxide special ceramics such as alumina, zirconia, aluminum nitride, silicon carbide, and silicon nitride.

The core principle of tungsten and tungsten alloy sintering furnace is to use resistance/induction heating to heat the tungsten powder body to 1500-2300 ℃ under high vacuum or protective atmosphere, allowing particles to achieve densification through diffusion, grain boundary migration and liquid phase flow, while avoiding oxidation and pollution.

The core feature of transparent ceramic sintering furnaces (mostly vacuum/atmosphere+high temperature+high pressure type) is to produce transparent ceramics with high transparency and no defects (such as YAG, Al ₂ O3, Sc ₂ O3, etc.) through exhaust holes, high density, high purity, and high uniformity.

Single crystal growth furnace is a core equipment in the fields of semiconductors, photovoltaics, optoelectronics, new materials, etc. It grows high-quality single crystals such as silicon, sapphire, silicon carbide, germanium, gallium arsenide, etc. through processes such as Czochralski (CZ), zone melting (FZ), and Bridgman's method, and is a key equipment in the upstream of the industrial chain.