A single crystal growth furnace is an equipment used for growing single crystals, which plays a crucial role in various fields such as semiconductors, optics, electronics, etc. It mainly includes the following aspects: 1. Preparation of semiconductor materials: In the semiconductor industry, single crystal silicon is a key material for manufacturing integrated circuit chips. By correctly controll
The single crystal growth furnace has the following characteristics: 1. Proper control aspect Correct temperature: able to control the temperature within a very accurate range, for example, when growing silicon single crystals by direct pull method, the polycrystalline silicon raw material in the quartz crucible should be heated to above 1450 ℃ and kept stable. The accuracy of temperature
The ultra-high temperature sintering furnace has the following characteristics: 1. High temperature characteristics Ultra high temperature range: The most significant feature of ultra-high temperature sintering furnaces is the ability to provide a high temperature environment, generally reaching above 1800 ℃, and even some excellent equipment can exceed 3000 ℃. For example, sintering furn